AN INVESTIGATION ON TRANSPARENT CONDUCTIVE P-TYPE COPPER (I) IODIDE THIN FILMS

Authors

J. Harwell, University of West Georgia
L. Ajith DeSilva, University of West Georgia
T.M.W.J. Bandera, University of Sri Lanka
G.R.A. Kumara, University of Peradeniya
A.G.U. Perera, Georgia State Univeristy
K. Tennekone, Univerity of West Georgia

Abstract

Copper (I) iodide (CuI), a p-type wide band gap (~3.1 eV) transparent semiconductor is a potential candidate for a range of applications in optoelectronics. Polycrystalline p-CuI thin films were prepared on glass substrate by solution processing at low temperature. The CuI films were doped with iodine vapor and with KSCN to achieve a high conductivity. Their electrical and optical properties were characterized by current-voltage measurements and UV–visible spectroscopy. The surface morphology of the films was also characterized by scanning electron microscopy. Financial support from UWG SEEP and SRAP programs are acknowledged.

Recommended Citation

Harwell, J.; DeSilva, L. Ajith; Bandera, T.M.W.J.; Kumara, G.R.A.; Perera, A.G.U.; and Tennekone, K. (2017) "AN INVESTIGATION ON TRANSPARENT CONDUCTIVE P-TYPE COPPER (I) IODIDE THIN FILMS," Georgia Journal of Science, Vol. 75, No. 1, Article 83.
Available at: https://digitalcommons.gaacademy.org/gjs/vol75/iss1/83