EFFECT OF GAMMA IRRADIATION ON CdTe/ZnTe BILAYER THIN FILMS
In the present investigation, CdTe/ZnTe bilayer thin films were deposited by vacuum evaporation technique followed by vacuum annealing. The individual layer thickness in CdTe/ZnTe bilayer was varied in different ratios. These bilayer thin films were subjected to 100 KGy doses of 60Co gamma (γ) rays. The morphological studies were carried out by Scanning Electron Microscopy (SEM). The SEM micrographs suggested that γ-irradiation induces surface modifications. The elemental composition was studied by Energy Dispersive X-ray Spectroscopy (EDAX). EDAX studies indicated no compositional changes after γ- irradiation. The optical constants of γ-irradiated films were estimated on the basis of optical absorption spectra obtained from UV-vis-spectrophotometer. The Photoluminescence (PL) spectroscopy was carried out for defect studies. PL-studies indicated that the γ- irradiation results in defect annihilation. Support from the Faculty exchange program between the University of West Georgia, USA and the Birla College, Kalyan, India is acknowledged.
Thakurdesai, Madhavi and DeSilva, L. Ajith
"EFFECT OF GAMMA IRRADIATION ON CdTe/ZnTe BILAYER THIN FILMS,"
Georgia Journal of Science, Vol. 75, No. 1, Article 87.
Available at: https://digitalcommons.gaacademy.org/gjs/vol75/iss1/87