HOMEMADE DIODE FOR PHYSICS AND ELECTRONICS LABS

Authors

T. King, University of West Georgia
L. Ajith DeSilva, University of West Georgia
J. E. Hasbun, University of West Georgia

Abstract

We constructed a simple diode from commercially available compound semiconductors namely n-TiO₂ and p-CuI. The diode is a semiconductor p-n junction, the most basic device of all electronics. The entire diode can be made within 10 minutes without any sophisticated instruments. The current-voltage characteristics showed a similar behavior to a regular Si diode. We use a non-linear fitting procedure to analyze the experimental results. The fitting non- linear model used is based on the work of Danielson and Depoy [1] with slightly fewer parameters. Diode characteristics and rectification properties are discussed and compared with a regular Si diode. [1]"Accurate Method for Forward and Reverse Bias Curve Fitting of TPV I-V Data,” L. R. Danielson and D. M. Depoy, (2006, http://www.osti.gov/scitech/servlets/purl/882557). Financial support from UWG SEEP and SRAP programs are acknowledged.

Recommended Citation

King, T.; DeSilva, L. Ajith; and Hasbun, J. E. (2017) "HOMEMADE DIODE FOR PHYSICS AND ELECTRONICS LABS," Georgia Journal of Science, Vol. 75, No. 1, Article 90.
Available at: https://digitalcommons.gaacademy.org/gjs/vol75/iss1/90