FIXING STOICHIOMETRY OF CUI FOR CONTROLLED MEASUREMENTS OF SEMICONDUCTING PROPERTIES**

Authors

Nicole Morris*, Deaprtment of Physics, University of West Georgia, Carrollton, GA 30118.Follow
Joshua Harwell*, Deaprtment of Physics, University of West Georgia, Carrollton, GA 30118.
L. Ajith DeSilva, Deaprtment of Physics, University of West Georgia, Carrollton, GA 30118.Follow
K. Tennakone, Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303

Abstract

Copper (I) Iodide is a p-type semiconductor of band gap of ~ 3.1 eV. The high hole mobility, good optical transparency and ease of fabricating thin films makes it a rare example of a solution processable transparent hole conductor. The properties of CuI depend on presence of iodine in stoichiometric excess, when iodine acts as an electron acceptor generating holes in the valence band. All samples of CuI including freshly prepared contain excess iodine due oxidation. A method is described for elimination excess iodine CuI so that doping could be controlled to conduct accurate measurements of carrier concentration, mobilities and optical properties.

Acknowledgements

Financial support from following programs are acknowledged: UWG FRG, UWG SEEP Undergraduate Research and Mentoring Program and UWG SRAP.

Recommended Citation

Morris*, Nicole; Harwell*, Joshua; DeSilva, L. Ajith; and Tennakone, K. (2018) "FIXING STOICHIOMETRY OF CUI FOR CONTROLLED MEASUREMENTS OF SEMICONDUCTING PROPERTIES**," Georgia Journal of Science, Vol. 76, No. 1, Article 16.
Available at: https://digitalcommons.gaacademy.org/gjs/vol76/iss1/16