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NOVEL APPLICATION OF ZINC OXIDE NANOWIRE IN SOLAR CELLS**

Abstract

Zinc Oxide (ZnO) is a wide band gap (3.37eV) semiconductor with a high exciton binding energy of 60mev. Due to a large band gap, ZnO becomes an attractive semiconductor material in solar cells. Particularly, its extreme large binding energy of the exciton enables the stable formation of the exciton in ZnO at room temperature, which allows for lots of advantages in optoelectric applications. A facile thermal approach is adopted to synthesize ZnO Nanowires. ZnO Nanowires will be scrutinized by Four-probe method for their conductivities, Ultraviolet-visible-absorption of their optical properties, scanning electron microscopy for their morphology and X-ray diffraction for their crystal structures. For the first time, ZnO nanowires is applied as an electron transporting layer in p-i-n perovskite solar cell due to their excellent semiconducting and conductivities.

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