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Georgia Journal of Science

Article Title

AN INVESTIGATION OF TRANSPARENT WIDE BAND GAP SEMICONDUCTORS**

Abstract

Solution processable optically transparent semiconductors have numerous optoelectronic applications. Copper (I) iodide (CuSCN) and Copper (I) thiocyanate (CuSCN) are both p-type semiconductors having direct band gap of 3.2 and 3.9 eV respectively. Titanium dioxide (TiO2) is an n-type semiconductor with a band gap of 3.2 eV. We have successfully fabricated thin films of all three materials either using spin coating or by drop coating from a solution. It is found that both semiconducting properties of CuI and CuSCN depend on stoichiometric excess of iodine and SCN introduced during synthesis process of the materials. Thin films of CuI have a higher conductivity than CuSCN layers but later is more transparent. Spin coated TiO2 films exhibit the highest transparency with conductivity in the order of 10-16 Sm-1 for ~ 1 micron thick layers. Photosensitivity and temperature dependent of CuI thin films are also investigated. Sample preparation methods, measurement techniques and optical/electrical properties will be presented.

Acknowledgements

This work was supported by the U.S. Army Research Office under Undergraduate Research Apprenticeship Program, Modification P-00008 to Grant Award, W911NF-15-1-0018 with GSU.

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