UNIFIED STUDY OF THE CLASSICAL HALL EFFECT

Authors

Carter J. Reed, University of West GeorgiaFollow
Javier E. Hasbun, University of West GeorgiaFollow
Wyatt E. Ackerman, University of West GeorgiaFollow
L Ajith DeSilva, University of West GeorgiaFollow

Abstract

Germanium (Ge) samples with different doping types, acceptors (p-type) and donors (n-type), were studied to investigate charge carrier behavior. Carrier concentrations were found to be 1.16×10^21 m^(-3) for the p-type sample and 7.337×10^20 m^(-3) for the n-type sample. These experiments were conducted for the standard Hall effect (Hall voltage versus low magnetic field (B) values) as well as conductivity and Hall voltage versus temperature for different B-fields. The measurements versus temperature at zero-field allow us to obtain band gap ( Eg). While we investigate the conductivities for n-type and p-type doped samples, we also study the conductivity of an undoped Ge sample from which we obtained an energy gap of Eg=0.651eV which compares well with the known value of 0.67eV at room temperature. While it is commonly known that the classical Hall voltage is linear with B-fields, not so common is the behavior of the classical Hall voltage with temperature, especially for both n-type and p-type samples. Thus, we derive a general Hall voltage formula for semiconductors that unifies the understanding of both n-type and p-type carriers. Our experimental results are analyzed with the unified theory using MATLAB. An example MATLAB program is also included to perform calculations with our unified Hall voltage expression.

Acknowledgements

Funding support provided by the Georgia Space Grant Consortium, a NASA Training Grant NNH18ZHA007C

Recommended Citation

Reed, Carter J.; Hasbun, Javier E.; Ackerman, Wyatt E.; and DeSilva, L Ajith (2025) "UNIFIED STUDY OF THE CLASSICAL HALL EFFECT," Georgia Journal of Science, Vol. 83, No. 2, Article 7.
Available at: https://digitalcommons.gaacademy.org/gjs/vol83/iss2/7